Publication
Determining base transit time of anAlyGa1-yAs HBT using the analytical model developed for SiGe device with exponentially doped base (2014) 2014 International Conference on Electronics and Communication Systems, ICECS 2014, art. no. 6892716
- DOI
- 10.1109/ECS.2014.6892716
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- ISBN
- 9781479923205
- Citations
- 1